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K4S561632H Datasheet

Manufacturer: Samsung Electronics
K4S561632H datasheet preview

Datasheet Details

Part number K4S561632H
Datasheet K4S561632H_SamsungElectronics.pdf
File Size 424.28 KB
Manufacturer Samsung Electronics
Description 256Mb H-Die SDRAM
K4S561632H page 2 K4S561632H page 3

K4S561632H Overview

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No.

K4S561632H Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Seque
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)
  • Pb/Pb-free Package

K4S561632H Applications

  • Samsung Electronics reserves the right to change products or specification without notice

K4S561632A from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Samsung semiconductor Logo K4S561632A 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor Logo K4S561632B 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung Logo K4S561632C 256Mbit SDRAM Samsung
Samsung semiconductor Logo K4S561632D 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor Logo K4S561632E-NC60 SDRAM 256Mb E-die Samsung semiconductor
Samsung Electronics logo - Manufacturer

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